期刊
出版社
ELSEVIER
DOI: 10.1016/j.nimb.2017.03.162
关键词
SRAM; Low energy proton; Single event upset; Direct ionization
类别
资金
- National Natural Science Foundation of China [11690041, 11675233, 11179003, 11375241]
The single event upset (SEU) response of 65 nm commercial double data rate static random access memory (SRAM) and quad data rate SRAM was investigated by using proton beams with energies in the range of 0.15 MeV to 8.0 MeV. Experimental results show that a significant number of SEU occurrences can be triggered when the energy of incident proton is below 1 MeV. For the low energy protons, the SEU cross section measured in these SRAMs was found to increase with increasing proton energy, attaining a peak value, and then decreases as the proton energy was further increased. While in case of quad data rate SRAMs, it seems that they are more sensitive to SEU occurrences as compared with double data rate SRAMs. The bias voltage and data pattern dependence on SEU cross section induced by the low energy protons were also investigated in this work. In addition, the over-layer thickness of the SRAMs and the impact of degrader use in proton induced SEU test were also analyzed in detail. Monte Carlo simulations results indicate that the use of degrader in case of low energy proton induced SEU test results in a significant reduction of the SEU cross section. (C) 2017 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据