期刊
ADVANCED MATERIALS
卷 30, 期 2, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201704733
关键词
angle-resolved photoemission spectroscopy; CsBi4Te6; itinerant carriers; narrow-gap semiconductors
类别
资金
- National Key R& D Program of China [2017YFA0303500, 2016YFA0401004]
- National Natural Science Foundation of China [21622107, 21401182, U1532136, 11621063, 91422303, U1532265, 11574315]
- National Basic Research Program of China [2014CB921102]
- Youth Innovation Promotion Association CAS [2016392]
- Key Research Program of Frontier Sciences [QYZDY-SSW-SLH011]
- Fundamental Research Funds for the Central University [WK2340000075]
The ability to accurately determine the electronic structure of solids has become a key prerequisite for modern functional materials. For example, the precise determination of the electronic structure helps to balance the three thermoelectric parameters, which is the biggest challenge to design high-performance thermoelectric materials. Herein, by high-resolution, angle-resolved photoemission spectroscopy (ARPES), the itinerant carriers in CsBi4Te6 (CBT) are revealed for the first time. CBT is a typical anisotropic, narrow-gap semiconductor used as a practical candidate for low-temperature thermoelectric applications, and p-doped CBT series show superconductivity at relatively low carrier concentrations. The ARPES results show a significantly larger bandwidth near the Fermi surface than calculations, which means the carriers transport anisotropically and itinerantly in CBT. It is reasonable to believe that these newly discovered features of carriers in narrow-gap semiconductors are promising for designing optimal thermoelectric materials and superconductors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据