期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 36, 期 2, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.5015968
关键词
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资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0016380, DE-SC0017801]
- U.S. Department of Energy (DOE) [DE-SC0017801] Funding Source: U.S. Department of Energy (DOE)
In this article, the authors first report on the optimum growth parameters for (Bi1-xInx)(2)Se-3 alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth, single-phase films can only be obtained by using a sequential growth and annealing method to seed the film, after which normal codeposition growth can be used. The topological insulator Bi2Se3 is then grown on top of various (Bi1-xInx)(2)Se-3 buffers and the electrical properties measured. For Bi2Se3 films grown on high-quality buffer layers, the mobility is greatly enhanced and the carrier density reduced compared to growth directly on sapphire substrates, indicating a significant improvement in film quality. The use of an almost lattice-matched trivially insulating buffer layer is therefore crucial to the growth of high-quality topological insulators on arbitrary substrates. Published by the AVS.
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