期刊
ACS APPLIED ENERGY MATERIALS
卷 1, 期 4, 页码 1585-1593出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.8b00003
关键词
growth mechanism; chemical solution deposition; transparent conducting oxide; thin film; perovskite; BaSnO3
资金
- National Natural Science Foundation of China [11604337]
- Nature Science Foundation of Anhui Province [1508085ME103]
- Director's Fund of Hefei Institutes of Physical Science [YZJJ201513]
Epitaxial thin films of perovskite BaSn1-xSbxO3-delta are fabricated by a simple chemical solution deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO3-delta thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO3-delta grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn0.91Sb0.09O3-delta thin film. It is confirmed that the ionized Sb5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn1-xSbxO3-delta thin films. The results will provide guidance for synthesis of BaSnO3-delta-based and other donor-doped perovskite transparent conducting large-area thin films with low cost.
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