期刊
ACS APPLIED ENERGY MATERIALS
卷 1, 期 6, 页码 2841-2848出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.8b00488
关键词
solar cell; metallization; copper; nickel; nickel silicide
资金
- U.S. Department of Energy [DE-AC36-08G028308]
- Alliance for Sustainable Energy, LLC
- U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office [SETP DE-EE00025783, SETP DE-EE00030301]
Copper is a low-cost, low-damage alternative to Ag paste for front-side metallization of crystalline Si (c-Si) solar cells, but requires conductive diffusion barriers like Ni or NiSi. Thermal stability of these barriers during postmetallization anneal is critical for performance. In this study, we address the structural and chemical stability of Cu contacts with both Ni and NiSi barrier layers, identifying interfacial reactions responsible for their degradation. Superior thermal and chemical stability of single-phase NiSi barrier as compared to Ni is made evident by XRD, Auger, and Raman spectroscopies. Moreover, the commonly used Cu-Ni-Si contact stack does not convert to more stable Cu NiSi Si stack upon thermal treatment. Instead, Cu readily alloys with the Ni layer and reacts with the underlying c-Si to form Cu3Si, with no evidence for the formation of NixSi phases. Also, even the superior NiSi barrier slowly dissolves into Cu at elevated temperatures.
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