期刊
ACS APPLIED ENERGY MATERIALS
卷 1, 期 8, 页码 3693-3701出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.8b00493
关键词
c-Si solar cells; silicon nanowires; metal-assisted chemical etching; surface photovoltage spectroscopy; surface states; diffusion length
资金
- Cost Action [MP1406]
- Bulgarian National Science Fund [DKOCT 01/16]
High-density silicon nanowires (SiNWs) were fabricated on p-Si substrates by metal-assisted chemical etching (MACE). A chemical cleaning with HF/piranha/HF was used to remove structural defects from the nanowire surface which are at the origin of surface recombination states. Surface photovoltage (SPV) spectroscopy, capacitance-voltage (C-V), and conductance measurements were used to study the SiNW properties and assess the effectiveness of the cleaning process. For the as-grown samples, the analysis of the SPV amplitude and phase spectra demonstrated high density of positively charged surface recombination centers. These centers increase the surface band bending and decrease the minority carrier lifetime and diffusion length. Si nanostructures at the SiNW surface introduce slow traps, as evidenced by the frequency dispersion at accumulation of the C-V curves and the increase of the diffusion length with frequency. All these features are effectively reduced when the SiNWs are subjected to HF/piranha/HF chemical cleaning. Thus, a cheap and effective way is demonstrated to reduce the surface state density and improve the electronic quality of the surface of SiNWs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据