期刊
ELECTRONICS LETTERS
卷 51, 期 20, 页码 1598-1599出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2015.2364
关键词
aluminium compounds; gallium compounds; III-V semiconductors; wide band gap semiconductors; metal-semiconductor-metal structures; photodetectors; ultraviolet detectors; lighting; AlGaN; voltage 0 V; efficiency 24 percent; wavelength 240 nm; internal gain mechanism; dark current; illumination; zero-bias external quantum efficiency; solar-blind metal-semiconductor-metal photodetector; asymmetric metallisation scheme; solar-blind AlGaN MSM photodetectors
资金
- Federal Ministry of Education and Research (Berlin WideBaSe initiative) [03WKBT02C]
- German Research Foundation as part of the Collaborative Research Center 'Semiconductor Nanophotonics' [CRC787]
By utilising an asymmetric metallisation scheme to fabricate an AlGaN-based solar-blind metal-semiconductor-metal photodetector, a zero-bias external quantum efficiency (EQE) of 24% for illumination at 240 nm wavelength from the substrate side was obtained. Moreover, an asymmetric bias-dependence of dark current and EQE is observed. The EQE saturates at about 38% in reverse direction, whereas in forward direction the presence of an internal gain mechanism is indicated.
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