期刊
ELECTRONICS LETTERS
卷 51, 期 13, 页码 1010-U38出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2015.1135
关键词
thermal resistance; indium compounds; III-V semiconductors; heterojunction bipolar transistors; vapour deposition; diamond; improved thermal management; diamond heat-spreading layer; transferred-substrate technology; indium phosphide double-heterobipolar transistors; TS technology; vapour-phase deposited diamond layer; vertical layer stack; thermal resistance; single emitter-finger HBT; HBT MMIC; InP
资金
- BMBF - Federal Ministry of Education and Research, Germany [16V0060]
A method to improve the thermal management of indium phosphide (InP) double-hetero bipolar transistors (DHBTs) fabricated in a transferred-substrate technology is presented. A vapour-phase deposited diamond layer acting as a heat spreader is heterogeneously integrated into the vertical layer stack. It is observed that the diamond layer reduces the thermal resistance of a 0.8 x 5 mu m(2) single emitter-finger HBT by roughly 75% down to 1.1 K/mW which is, to the authors' knowledge, the best value reported thus far for InP HBTs of comparable size. It is also the first demonstration of heterogeneous integration of diamond into an InP HBT monolithic microwave integrated circuit.
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