期刊
NPJ 2D MATERIALS AND APPLICATIONS
卷 2, 期 -, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41699-018-0080-4
关键词
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资金
- Early Career Faculty grant from NASA's Space Technology Research Grants Program [80NSSC17K0526]
- AFOSR [FA9550-18-1-0300]
- DNRF Research Centre of Excellence, SPOC [DNRF-123]
- Danish Council for Independent Research [DFF-1337-00152, DFF-1335-00771]
- National Science Foundation [DGE-1069240, CBET-1438147]
Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible-near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.
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