4.8 Article

Highly efficient on-chip direct electronic-plasmonic transducers

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NATURE PHOTONICS
卷 11, 期 10, 页码 623-+

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NATURE PUBLISHING GROUP
DOI: 10.1038/s41566-017-0003-5

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  1. National Research Foundation (NRF) under the Prime Minister's Office, Singapore, under its Medium Sized Centre Programme [NRF-CRP17-2017-08]
  2. National Research Foundation (NRF) under the Prime Minister's Office, Singapore, under its Competitive Research Programme (CRP) [NRF-CRP17-2017-08]

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Photonic elements can carry information with a capacity exceeding 1,000 times that of electronic components, but, due to the optical diffraction limit, these elements are large and difficult to integrate with modern-day nanoelectronics or upcoming packages, such as three-dimensional integrated circuits or stacked high-bandwidth memories(1-3). Surface plasmon polaritons can be confined to subwavelength dimensions and can carry information at high speeds (>100 THz)(4-6). To combine the small dimensions of nanoelectronics with the fast operating speed of optics via plasmonics, on-chip electronic-plasmonic transducers that directly convert electrical signals into plasmonic signals (and vice versa) are required. Here, we report electronic-plasmonic transducers based on metal-insulator-metal tunnel junctions coupled to plasmonic waveguides with high-efficiency on-chip generation, manipulation and readout of plasmons. These junctions can be readily integrated into existing technologies, and we thus believe that they are promising for applications in on-chip integrated plasmonic circuits.

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