4.8 Article

Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors

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NATURE PHOTONICS
卷 11, 期 3, 页码 193-+

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NATURE PUBLISHING GROUP
DOI: 10.1038/NPHOTON.2017.15

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资金

  1. NSF Graduate Fellowship Research Program [DGE-1106400]
  2. Systems on Nanoscale Information fabriCs (SONIC) - MARCO
  3. Systems on Nanoscale Information fabriCs (SONIC) - DARPA

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Solution-processed phototransistors can substantially advance the performance of image sensors. Phototransistors exhibit large photoconductive gain and a sublinear responsivity to irradiance, which enables a logarithmic sensing of irradiance that is akin to the human eye and has a wider dynamic range than photodiode-based image sensors. Here, we present a novel solution-processed phototransistor composed of a heterostructure between a high-mobility organic semiconductor and an organic bulk heterojunction. The device efficiently integrates photogenerated charge during the period of a video frame then quickly discharges it, which significantly increases the signal-to-noise ratio compared with sampling photocurrent during readout. Phototransistor-based image sensors processed without photolithography on plastic substrates integrate charge with external quantum efficiencies above 100% at 100 frames per second. In addition, the sublinear responsivity to irradiance of these devices enables a wide dynamic range of 103 dB at 30 frames per second, which is competitive with state-of-the-art image sensors.

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