期刊
NATURE NANOTECHNOLOGY
卷 12, 期 9, 页码 901-+出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2017.104
关键词
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资金
- Natural Science Foundation of Shanghai [16ZR1439400, 17ZR1447700]
- National Natural Science Foundation of China [11104204, 21301032]
- National Key Research and Development Program of China [2016YFA0203900]
- Singapore National Research Foundation under NRF RF Award [NRF-RF2013-08]
- MOE through the BRI program, 'Science and Emerging Technology of 2D Atomic Layered Materials and Devices' - United States Air Force Office of Scientific Research (AFOSR) [MOE2015-T2-2-007, BAA-AFOSR-2013-0001]
Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.
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