期刊
ELECTRONICS AND COMMUNICATIONS IN JAPAN
卷 98, 期 5, 页码 1-8出版社
WILEY-BLACKWELL
DOI: 10.1002/ecj.11667
关键词
AlGaN; AlN; crystal growth; deep-UV LED; internal quantum efficiency; MOCVD
Deep-ultraviolet (DUV) light-emitting diodes (LEDs) are in demand for a wide variety of potential applications, such as sterilization, water and air purification, medical uses, and so on. We have demonstrated 222-351 nm AlGaN and quaternary InAlGaN-based DUV-LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power greater than 30 mW in DUV-LEDs for use in sterilization applications by developing new crystal growth techniques.
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