Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm Silicon wafers

We present significant performance enhancements of AlGaN/GaN power Schottky diodes on 200 mm silicon substrates achieved by optimizing the anode fabrication and the epitaxial layers. 600V rated AlGaN/GaN power diodes using a MIS (Metal Insulator Semiconductor)-gated Schottky anode were processed using a CMOS compatible process flow transferable to mass production environments. Turn-on voltages V-T around 0.6 V at 25 degrees C, forward voltages V-F lower than 1.6 V at 100 mA/mm and 25 degrees C, reverse leakage currents I-REV ower than 1 mu A/mm at 600 V and 150 degrees C and excellent dynamic performances were achieved and outperform state of the art 600V rated AlGaN/GaN Schottky diodes.