期刊
NANOTECHNOLOGY
卷 28, 期 47, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa8081
关键词
transition metal dichalcogenide; field effect transistors; high k-dielectrics; interface engineering; atomic layer deposition
资金
- US Department of Energy (DOE) [DOE DE-SC0002136]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4416]
- US Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division
In this paper, high performance top-gated WSe2 field effect transistor (FET) devices are demonstrated via a two-step remote plasma assisted ALD process. High-quality, low-leakage aluminum oxide (Al2O3) gate dielectric layers are deposited onto the WSe2 channel using a remote plasma assisted ALD process with an ultrathin (similar to 1 nm) titanium buffer layer. The first few nanometers (similar to 2 nm) of the Al2O3 dielectric film is deposited at relatively low temperature (i.e. 50 degrees C) and remainder of the film is deposited at 150 degrees C to ensure the conformal coating of Al2O3 on the WSe2 surface. Additionally, an ultra-thin titanium buffer layer is introduced at the WSe2 channel surface prior to ALD process to mitigate oxygen plasma induced doping effects. Excellent device characteristics with current on-off ratio in excess of 10(6) and a field effect mobility as high as 70.1 cm(2) V-1 s(-1) are achieved in a few-layer WSe2 FET device with a 30 nm Al2O3 top-gate dielectric. With further investigation and careful optimization, this method can play an important role for the realization of high performance top gated FETs for future optoelectronic device applications.
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