期刊
NANOTECHNOLOGY
卷 28, 期 13, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa5ec4
关键词
epitaxial growth; facets; nanocrystal; nanotwin; MOVPE; GaAs on Si; nanoheteroepitaxy
资金
- Schweizerischer Nationalfonds zur Forderung der Wissenschaftlichen Forschung [DACH 200021L-153558]
- Deutsche Forschungsgemeinschaft (DFG) [DACH-SCHR 1123/10-1]
Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO2 matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro-and opto-electronics technology.
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