期刊
NANOTECHNOLOGY
卷 28, 期 17, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa6567
关键词
activation energy; unzipping DWNT; semiconducting behavior; field effect transistor; metal semiconductor transition
资金
- Japan Society for the Promotion of Science and by the Inamori Foundation and Iketani Foundation [25110002]
- [24510150]
- [15H03531]
- Grants-in-Aid for Scientific Research [15H03531, 25110002] Funding Source: KAKEN
In this study, a simple and fast approach of band gap formation in a single layer graphene nanoribbon (sGNR) is demonstrated by using hexaazatriphenylenehexacarbonitrile (HAT-CN6) as an adsorbate molecule. sGNRs were successfully synthesized through the unzipping of double-walled carbon nanotubes followed by casting HAT-CN6 in acetone solution to alter the electronic properties of the sGNRs. Then, the electrical property of a sGNR was measured using a field effect transistor structure and also by point- contact current imaging atomic force microscopy. The results demonstrate the formation of electron trapping sites with the nanoparticles and the neck structure of the sGNR near the adsorbed region of the molecule. Therefore, the charge carriers on the sGNR can only pass through the neck region, which works similarly to a narrow sGNR. Such a narrow sGNR has a lateral confinement of charge carriers around the neck region; hence, the device becomes semiconducting. The fabricated semiconducting sGNR could be widely used in electronic devices.
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