期刊
NANOTECHNOLOGY
卷 28, 期 40, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa882f
关键词
VO2; threshold switching; filament
资金
- FAME
- LEAST - MARCO
- DARPA
- NSF [DMR 1409068]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1409068] Funding Source: National Science Foundation
We report the results of finite element simulations of the ON state characteristic of VO2-based threshold switching devices and compare the results with experimental data. The model is based on thermally induced threshold switching (thermal runaway) and successfully reproduces the I-V characteristics showing the formation and growth of the conductive filament in the ON state. Furthermore, we compare the I-V characteristics for two VO2 films with different electrical conductivities in the insulating and metallic phases as well as those based on TaOx and NbOx functional layers.
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