期刊
NANOTECHNOLOGY
卷 28, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa5abe
关键词
colloidal lithography; nanostructure fabrication; gallium nitride; light-emitting diode; selective-area growth
资金
- National Natural Sciences Foundation of China [61474109, 61274040, 51472229, 61527814]
- Youth Innovation Promotion Association, Chinese Academy of Sciences
Gallium nitride-based nanopyramid light-emitting diodes are a promising technology to achieve highly efficient solid-state lighting and beyond. Here, periodic nanopyramid light-emitting diode arrays on gallium nitride/sapphire templates were fabricated by selective-area metalorganic chemical vapor deposition and multiple-exposure colloidal lithography. The electric field intensity distribution of incident light going through polystyrene microspheres and photoresist are simulated using finite-different time-domain method. Nitrogen as the carrier gas and a low V/III ratio (ratio of molar flow rate of group-V to group-III sources) are found to be important in order to form gallium nitride nanopyramid. In addition, a broad yellow emission in photoluminescence and cathodoluminescence spectra were observed. This phenomena showed the potential of nanopyramid light-emitting diodes to realize long wavelength visible emissions.
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