期刊
NANOTECHNOLOGY
卷 28, 期 31, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa79e9
关键词
interface band alignment; ferroelectric tunneling junction; Schottky barrier height; tunneling electroresistance; LSMO/PZT/Co; ferroelectric switching; density functional theory
资金
- CINECA under the ISCRA initiative [IsC10_MF-OXINT]
Band alignments in ferroelectric tunnel junctions (FTJs) are expected to play a critical role in determining the charge transport across the tunneling barrier. In general, however, the interface band discontinuities and their polarization dependence are not well known in these systems. Using a first-principles density-functional-theory approach, we explore the ferroelectric (FE) polarization dependence of the band alignments in La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3/Co (LSMO/PZT/Co) multiferroic tunnel junctions, for which recent experiments indicated an ON/OFF conductivity behavior upon switching the PZT FE polarization. Our results on the pseudomorphic defect-free LSMO/PZT/Co FTJs evidence a major FE switching effect on the band discontinuities at both interfaces. Based on the changes in the band alignments, we provide a possible explanation for the observed trends in the resistive switching.
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