期刊
NANOTECHNOLOGY
卷 29, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa96e9
关键词
photodetector; 2D materials; p-n junction; chemical doping; hydrazine
资金
- National Natural Science Foundation of China [51672154, 51372130]
- MoST [2016YFA0200200]
- Science and Technology Support Program of Sichuan Province [2016JZ0028]
Two dimensional (2D) materials have shown great potential in the photodetection and other optoelectronic applications. Exploiting 2D materials to form p-n junctions enables effective generation and separation of carriers excited by light, thus creating high-performance optoelectronic devices. This paper demonstrates a lateral WSe2 p-n junction through a locally hydrazine doping method. Good current-rectifying characteristics, including a high rectification ratio of similar to 10(3), have been observed; this indicates that a high-quality p-n junction has been formed by chemical doping. Under light illumination, the device shows improved photoresponse capabilities with a responsivity of 30 mA W-1, a detectivity of 6.18 x 10(8) Jones, photocurrent/dark current ratio of 10(3) and a response time of 2 ms. These results suggest an effective way to get a p-n junction and reveal the application potential of the device for next generation photodetectors.
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