期刊
NANOTECHNOLOGY
卷 28, 期 46, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa9173
关键词
nanowires; SiGe; p-n junction; field-effect transistor; Schottky contact
资金
- US Department of Energy's National Nuclear Security Administration [DE-NA0003525]
We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.
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