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Aibin Yu et al.
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Xavier Gagnard et al.
MICROELECTRONIC ENGINEERING (2010)
Wafer-level 3D integration technology
S. J. Koester et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
A hybrid multiscale kinetic Monte Carlo method for simulation of copper electrodeposition
Zheming Zheng et al.
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WP Dow et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2006)
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K Kondo et al.
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Influence of convection-dependent adsorption of additives on microvia filling by copper electroplating
WP Dow et al.
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MA Blauw et al.
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