期刊
NANOSCALE RESEARCH LETTERS
卷 12, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/s11671-017-2331-2
关键词
Nanostructure; Quantum dot; Metamorphic; InAs/InGaAs; Photovoltage; Photoconductivity; Photoluminescence; Defects
资金
- COST Action Nanoscale Quantum Optics of European Union
- National Basic Research Program of China [2015CB352005]
- National Natural Science Foundation of China [61525503/61378091/61620106016]
- Guangdong Natural Science Foundation Innovation Team [2014A030312008]
- Hong Kong, Macao, and Taiwan cooperation innovation platform & major projects of international cooperation in Colleges and Universities in Guangdong Province [2015KGJHZ002]
- Shenzhen Basic Research Project [JCYJ20150930104948169, JCYJ20160328144746940, GJHZ20160226202139185]
The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n(+)-buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers. The substrate-contacted samples demonstrated bipolar photovoltage; this was suggested to take place as a result of the competition between components related to QDs and their cladding layers with the substrate-related defects and deepest grown layer. No direct substrate effects were found in the spectra of the buffer-contacted structures. However, a notable negative influence of the n(+)-GaAs buffer layer on the photovoltage and photoconductivity signal was observed in the InAs/InGaAs structure. Analyzing the obtained results and the performed calculations, we have been able to provide insights on the design of metamorphic QD structures, which can be useful for the development of novel efficient photonic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据