期刊
NANOSCALE
卷 9, 期 48, 页码 19201-19208出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr07120e
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资金
- National Research Foundation (NRF) of Korea - Ministry of Education [NRF-2015R1D1A1A01059165]
- NRF by the Ministry of Science and ICT and Future Planning [NRF-2015H1D3A1066311]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry & Energy, Republic of Korea [20153030013200]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20153030013200] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [31Z20130012935] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Here, we demonstrate the broadband photoresponse from ultraviolet (365 nm) to near-infrared (850 nm) wavelengths from a photodetector based on vertically grown SnS layers. Particularly, the photoinduced current density of the device increased from 100 to 470 mu A cm(-2) with a wavelength of 760 nm and an intensity of 7 mW cm(-2) by utilizing the pyro-phototronic potential. In addition, the photodetector demonstrated ultrafast response rates of similar to 12 mu s for the rise and similar to 55 mu s for the decay times over the studied range. Moreover, a good photoresponsivity of 13 mA W-1 and a high photodetectivity of 3 x 10(14) Jones at a wavelength of 760 nm with an intensity of 7 mW cm(-2) were measured, representing enhancements of 340% and 3960%, respectively, with the pyroelectric potential. This excellent broadband performance was attributed to the photon-induced pyroelectric effect in the vertically grown SnS layers, which also modulated the optoelectronic processes. This novel approach will open a new avenue to design a broadband ultrafast device for advanced optoelectronics.
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