期刊
NANOSCALE
卷 9, 期 7, 页码 2541-2547出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr09484h
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- Institute for Basic Science [IBS-R011-D1]
The in-plane thermal conductivities of suspended monolayer, bilayer, and multilayer MoS2 films were measured in vacuum by using non-invasive Raman spectroscopy. The samples were prepared by chemical vapor deposition (CVD) and transferred onto preformed cavities on a Au-coated SiO2/Si substrate. The measured thermal conductivity (13.3 +/- 1.4 W m(-1) K-1) of the suspended monolayer MoS2 was below the previously reported value of 34.5 +/- 4 W m(-1) K-1. We demonstrate that this discrepancy arises from the experimental conditions that differ from vacuum conditions and small absorbance. The measured in-plane thermal conductivity of the suspended MoS2 films increased in proportion to the number of layers, reaching 43.4 +/- 9.1 W m(-1) K-1 for the multilayer MoS2, which explicitly follows the Fuchs-Sondheimer suppression function. The increase in the thermal conductivity with the number of MoS2 layers is explained by the reduced phonon boundary scattering. We also observe that the Fuchs-Sondheimer model works for the thickness-dependent thermal conductivity of MoS2 down to 10 nm in thickness at room temperature, yielding a phonon mean free path of 17 nm for bulk.
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