4.8 Article

Accelerating ion diffusion with unique three-dimensionally interconnected nanopores for self-membrane high-performance pseudocapacitors

期刊

NANOSCALE
卷 9, 期 46, 页码 18311-18317

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr06234f

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资金

  1. Hong Kong Research Grant Council [16237816]
  2. Hong Kong Innovation Technology Commission [ITS/362/14FP]
  3. National Natural Science Foundation of China [51672231]
  4. Center for 1D/2D Quantum Materials
  5. Science and Technology Innovation Project of Foshan City, China [2015IT100095]
  6. Science and Technology Planning Project of Guangdong Province, China [2016B010108002]
  7. State Key Laboratory on Advanced Displays and Optoelectronics at HKUST

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Herein, a unique three-dimensionally interconnected nanoporous structure (3-D INPOS) pseudocapacitor electrode, which possesses a large surface area, an efficient electron and ion transport, together with a remarkable structural stability, has been constructed via soft anodization of an aluminum alloy, cost-effective ultrasonic spray pyrolysis (USP)-assisted deposition of fluorine-doped tin oxide (FTO), and controllable electrochemical deposition of nanostructured manganese dioxide (MnO2). Taking the advantage of large surface area, the as-built 3-D INPOS pseudocapacitor electrode exhibits the highest areal capacitance of 540 mF cm(-2) and a volumetric capacitance of 135 F cm(-3), which is 53% higher than that achieved from the conventional 3-D nanopore pseudocapacitor electrode and 17.6 times higher than that of the planar electrode. More interestingly, the unique 3-D interconnected structure offers an unrestricted space for the diffusion of electrolyte ions. Thus, the 3-D INPOS electrode achieves a higher rate capability than the 3-D nanopore electrode. As a proof of concept, a symmetric self-membrane pseudocapacitor device was constructed by simply stacking two pieces of the 3-D INPOS electrodes. Without an added separator, the device possesses a largely reduced dead volume and achieves the highest volumetric capacitance of 28.9 F cm(-3) and a specific energy of 2.36 mW h cm(-3). The largely enhanced capacitance, rate capability, and specific energy certainly make the 3-D INPOS an ideal architecture for the fabrication of high-performance pseudocapacitors.

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