期刊
NANOSCALE
卷 9, 期 5, 页码 2068-2073出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr07937g
关键词
-
类别
资金
- Ministry of Science and Technology of China [2016YFA0301001]
- National Natural Science Foundation of China [11674071, 11674188, 11334006]
The contact interface plays a crucial role in the performance of various nanoelectronic devices based on two-dimensional (2D) semiconductors. Using first-principles calculations, we investigate the nature of single-layer titanium trisulfide (TiS3) and metal contacts as a prototype system. We find that the contacts with Au(111), Ag(111), Al(111) and Cu(111) are of the Schottky type with barriers of 2.15, 1.67, 1.55 and 0.84 eV while that with Sc(111) is of a low-resistance Ohmic type. By comparing with several other typical 2D semiconductor-metal contacts, we propose that the contact type (i.e., Schottky or Ohmic) can be preliminarily identified according to the separation between the metal and the 2D semiconductor, which can be conveniently measured in experiments, with a critical value of similar to 2.3 +/- 0.2 angstrom.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据