期刊
NANOSCALE
卷 9, 期 10, 页码 3576-3584出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr09495c
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资金
- National Science Foundation [DMR-1506460, DMR-1206354]
- NSF [DMR-1506460, DMR-1506263, MRI-1126394]
- US-Israel Binational Science Foundation
- San Diego Supercomputer Center (SDSC) Gordon [DMR060009N]
- Advanced Research Computing at Virginia Tech
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1506263, 1206354] Funding Source: National Science Foundation
Two-dimensional transition metal dichalcogenides (e.g. MoS2) have recently emerged as a promising material system for electronic and optoelectronic applications. A major challenge for these materials, however, is to realize bipolar electrical transport properties (i.e. both p-type and n-type conduction), which is critical for enhancing device performance and functionalities. Here, we demonstrate the transition metal zinc as a p-type dopant in the otherwise n-type MoS2, through systematic characterizations of large area Zn-doped MoS2 thin films grown by a one-step chemical vapor deposition (CVD) approach. Raman characterization and X-ray photoelectron spectroscopy studies identified millimeter-scale, monolayer films with 1-2% Zn as dopants. Zinc doping suppresses n-type conductivity in MoS2 and shifts its Fermi level downwards. The stability and p-type nature of Zn dopants were further confirmed by density-functional-theory calculations of formation energies and electronic band structures. The electrical transport properties of Zn-MoS2 films can be influenced by stoichiometry, and p-type gate transfer characteristics were realized by thermal treatment under a sulfur atmosphere. Our work highlights transition-metal doping followed by sulfur vacancy elimination in CVD grown films as a promising route for achieving large area p-type transition metal dichalcogenide films that are essential for practical applications in electronics and optoelectronics.
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