期刊
NANO RESEARCH
卷 11, 期 2, 页码 722-730出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-017-1681-5
关键词
transition metal dichalcogenide; field-effect transistors; carrier control; plasma treatment; carrier mobility
类别
资金
- U.S. Department of Energy (DOE) [DOE DE-SC0002136]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4416]
- U.S. Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division
- National Science Foundation (NSF) [DMR-1410940]
- Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses < 3, similar to 4, and > 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.
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