期刊
NANO RESEARCH
卷 10, 期 5, 页码 1784-1793出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-017-1491-9
关键词
topological insulators; p-n junctions; spintronics; electronic devices; twin boundaries
类别
资金
- Spanish Ministry of Economy and Competitiveness, MINECO/FEDER [MAT2015-66888-C3-1R]
- Spanish Ministry of Economy and Competitiveness, MINECO/FEDER [MAT2015-66888-C3-1R]
We propose a realistic topological p-n junction (TPNJ) by matching two Bi2Se3 (0001) slabs with opposite arrangements of planar twin boundary defects. The atomistic modeling of such a device leads to dislocation defects in the hexagonal lattice in several quintuple layers. Nevertheless, total energy calculations reveal that the interface relaxes, yielding a smooth geometrical transition that preserves the nearest-neighbors fcc-type geometry throughout these defect layers. The electronic, magnetic, and transport properties of the junction have then been calculated at the ab initio level under open boundary conditions, i.e., employing a thin-film geometry that is infinite along the electron transport direction. Indeed, a p-n junction is obtained with a built-in potential as large as 350 meV. The calculations further reveal the spin texture across the interface with unprecedented detail. As the main result, we obtain non-negligible transmission probabilities around the Gamma point, which involve an electron spin-flip process while crossing the interface.
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