期刊
NANO LETTERS
卷 17, 期 2, 页码 740-746出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03855
关键词
Spin-dependent electronic structure; transition metal dichalcogenides; optical spectroscopy; two-dimensional materials
类别
资金
- US Department of Energy, Office of Basic Energy Sciences [DESC0012635, DESC0013883]
- Air Force Office of Scientific Research [FA9550-16-1-0249]
- National Science Foundation [DMR-1410407]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1410407] Funding Source: National Science Foundation
We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectros-copy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2 and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first principles calculations. These values also suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin-and valley-based applications.
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