期刊
NANO LETTERS
卷 17, 期 6, 页码 3607-3612出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b00766
关键词
Black phosphorus; STM; STS; defect; anisotropy; tight-binding; phosphorene
类别
资金
- Emmy Noether Program via the Deutsche Forschungsgemeinschaft [KH324/1-1]
- Foundation of Fundamental Research on Matter (FOM), part of The Netherlands Organization for Scientific Research (NWO)
- NWO [680-47-534]
- Alexander von Humboldt foundation via the Feodor Lynen Research Fellowship
- European Union [696656]
Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and electronic structure calculations, we characterize the structural and electronic properties of single atomic vacancies within several monolayers of the surface of black phosphorus. We illustrate, with experimental analysis and tight-binding calculations, that we can depth profile these vacancies and assign them to specific sublattices within the unit cell. Measurements reveal that the single vacancies exhibit strongly anisotropic and highly delocalized charge density, laterally extended up to 20 atomic unit cells. The vacancies are then studied with STS, which reveals in-gap resonance states near the valence band edge and a strong p-doping of the 'bulk black phosphorus crystal. Finally, quasiparticle interference generated near these vacancies enables the direct visualization of the anisotropic band structure of black phosphorus.
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