Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

Coristructing quantum devices comprises various challenging tasks, especially when concerning their nanoscale geometry. For quantum color centers, the traditional approach is to fabricate the, device structure after the nondeterministic placement of the centers. Reversing this approach, we present the controlled-generation of; quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the materials stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. We identify the generated centers as silicon vacancies through-their characteristic magnetic, resonance signatures and demonstrate that they possess along spin-echo coherence time of 42 +/- 20 mu s at room temperature. Our approach hence enables the fabrication of quantum hybrid nano devices, based on SiC platform, where Spin centers are integrated into diodes, photonic cavities, and Mechanical resonators.