期刊
NANO LETTERS
卷 17, 期 2, 页码 615-621出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03299
关键词
III-Nitride semiconductors; nanowires; photoluminescence; H2O adsorption; surface recombination; surface passivation; photoelectrochemical water splitting
类别
资金
- LOEWE program of excellence of the Federal State of Hessen (project initiative STORE-E)
We demonstrate that the complex adsorption behavior of H2O on InGaN/GaN nanowire arrays is directly revealed by their ambient-dependent photoluminescence properties. Under low-humidity, ambient-temperature, and low-excitation-light conditions, H2O adsorbates cause a quenching of the photoluminescence. In contrast, for high humidity levels, elevated temperature, and high excitation intensity, H2O adsorbates act as efficient photoluminescence enhancers. We show that this behavior, which can only be detected due to the low operation temperature of the InGaN/GaN nanowires, can be explained on the basis of single H2O. adsorbates forming surface recombination centers and multiple H2O adsorbates forming surface passivation layers. Reversible creation of such passivation layers is induced by the photoelectrochemical splitting of adsorbed water molecules and by the interaction of reactive H3O+ and OH- ions with photoactivated InGaN surfaces. Due to electronic coupling of adsorbing molecules with photoactivated surfaces, InGaN/GaN nanowires act as sensitive nanooptical probes for the analysis of photoelectrochemical surface processes.
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