期刊
NANO LETTERS
卷 17, 期 8, 页码 4619-4623出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b01029
关键词
Tellurium; helical chains; molecular beam epitaxy; scanning tunneling microscopy; semiconducting band gap; optoelectronics
类别
资金
- National Key Research and Development Program of China [2016YFA0300600, 2016YFA0202300]
- Chinese NSF [11634016, 11474334]
- Chinese Academy of Sciences [XDB07030100]
Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the Te films are composed of parallel-arranged helical Te chains flat-lying-on the graphene surface, exposing the (1 X 1) facet of (10 (1) over bar0) of the bulk crystal. The band gap of Te films increases monotonically with decreasing thickness, reaching the near-infrared band for the monolayer Te. An explicit band bending at the edge between the monolayer Te and graphene substrate is visualized. With the thickness controlled in the atomic scale, Te films show potential applications of electronics and optoelectronics.
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