期刊
NANO LETTERS
卷 17, 期 5, 页码 3159-3164出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b00636
关键词
Subwavelength grating; high-index contrast; color filters; CMOS image sensor
类别
资金
- Samsung Electronics
- Japan Student Services Organization (JASSO) fellowship
- DOE Light-Material Interactions in Energy Conversion Energy Frontier Research Center - US Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001293]
We report transmissive color filters based on subwavelength dielectric gratings that can replace conventional dye-based color filters used in backside-illuminated CMOS image sensor (BSI CIS) technologies. The filters are patterned in an 80 nm-thick poly silicon film on a 115 nm-thick SiO2 spacer layer. They are optimized for operating at the primary RGB colors, exhibit peak transmittance of 6080%, and have an almost insensitive response over a +/- 20 degrees angular range. This technology enables shrinking of the pixel sizes down to near a micrometer.
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