期刊
NANO LETTERS
卷 18, 期 1, 页码 229-234出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b03954
关键词
Integer/fractional quantum Hall effect; black phosphorus; anisotropy; field effect transistor
类别
资金
- NSF/ECCS [1509958]
- National Science Foundation [DMR-1157490]
- State of Florida
- Elemental Strategy Initiative
- JSPS KAKENHI [JP26248061, JP15K21722, JP25106006]
- Grants-in-Aid for Scientific Research [25106006] Funding Source: KAKEN
- Directorate For Engineering [1509958] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [1509958] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1758156] Funding Source: National Science Foundation
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding questions such as the functional dependence of Landau level (LL) gaps on magnetic field B, and possible anisotropic fractional QH states. Using encapsulated few-layer BP transistors with mobility up to 55 000 cm(2)/(V s), we extracted LL gaps over an exceptionally wide range of B for QH states at filling factors -1 to -4, which are determined to be linear in B, thus resolving a controversy raised by its anisotropy. Furthermore, a fractional QH state at nu approximate to -4/3 and an additional feature at -0.56 +/- 0.1 are observed, underscoring BP as a tunable 2D platform for exploring electron interactions.
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