期刊
NANO LETTERS
卷 17, 期 8, 页码 4568-4575出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b00730
关键词
2D semiconductors; atomic layer MoS2; bulge test; strain tuning; Raman spectroscopy; photoluminescence (PL)
类别
资金
- National Academy of Engineering (NAE) Grainger Foundation Frontier of Engineering (FOE) Award [FOE 2013-005]
- National Science Foundation [ECCS-1454570]
- National Science Foundation SNM Award [CMMI-1246715]
- Case School of Engineering
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1454570] Funding Source: National Science Foundation
Emerging atomic layer semiconducting crystals such as molybdenum disulfide (MoS2) are promising candidates for flexible electronics and strain-tunable devices due to their ultrahigh strain limits (up to similar to 20-30%) and strain-tunable bandgaps. However, high strain levels, controllable isotropic and anisotropic biaxial strains in single- and few layer MoS2 on device-oriented flexible substrates permitting convenient and fast strain tuning, remain unexplored. Here, we demonstrate a blown-bubble bulge technique for efficiently applying large strains to atomic layer MoS2 devices on a flexible substrate. As the strain increases via bulging, we achieve continuous tuning of Raman and photoluminescence (PL) signatures in single- and few-layer MoS2 including splitting of Raman peaks. With proper clamping of the MoS2 crystals, we apply up to similar to 9.4% strain in the flexible substrate, which causes a doubly clamped single-layer MoS2 to fracture at 2.2-2.6% strain measured by PL and 2.9-3.5% strain measured by Raman spectroscopy. This study opens new pathways for exploiting 2D semiconductors on stretchable substrates for flexible electronics, mechanical transducers, tunable optoelectronics, and biomedical transducers on curved and bulging surfaces.
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