期刊
NANO LETTERS
卷 17, 期 6, 页码 3854-3861出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b01322
关键词
Flame synthesis; MoO3 monolayer; WSe2; p-type doping; transition metal dichalcogenides
类别
资金
- Bay Area Photovoltaics Consortium (BAPVC)
- Global Research Outreach (GRO) Program of the Samsung Advanced Institute of Technology (SALT) [IC2012-1318]
- Samsung R&D Center America, Silicon Valley (SRA-SV)
- Air Force Office of Scientific Research [FA9550-14-1-0251]
- National Science Foundation (NSF) EFRI 2-DARE Grant [1542883]
- NSF Graduate Research Fellowship program
- Stanford Initiative for Nanoscale Materials and Processes (INMP)
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1542883] Funding Source: National Science Foundation
Two-dimensional (2D) molybdenum trioxide (MoO3) with mono- or few-layer thickness can potentially advance many applications, ranging from optoelectronics, catalysis, sensors, and batteries to electrochromic devices. Such ultrathin MoO3 sheets can also be integrated with other 2D materials (e.g., as dopants) to realize new or improved electronic devices. However, there is lack of a rapid and scalable method to controllably grow mono- or few-layer MoO3. Here, we report the first demonstration of using a rapid (<2 min) flame synthesis method to deposit mono- and few layer MoO3 sheets (several microns in lateral dimension) on a wide variety of layered materials, including mica, MoS2, graphene, and WSe2, based on van der Waals epitaxy. The flame-grown ultrathin MoO3 sheet functions as an efficient hole doping layer for WSe2, enabling WSe2 to reach the lowest sheet and contact resistance reported to date among all the p-type 2D materials (--6.5 k0/111 and-418 kSZftm, respectively). These results demonstrate that flame synthesis is a rapid and scalable pathway to growing atomically thin 2D metal oxides, opening up new opportunities for advancing 2D electronics.
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