期刊
NANO LETTERS
卷 17, 期 10, 页码 6303-6308出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b03001
关键词
Bi14Rh3I9; topological insulators; density functional theory; chemical gating; doping; quantum spin Hall effect
类别
资金
- Alexander von Humboldt Foundation
The compound Bi14Rh3I9 has recently been suggested as a weak three-dimensional topological insulator on the basis of angle resolved photoemission and scanning-tunneling experiments in combination with density functional (DF) electronic structure calculations. These methods unanimously support the topological character of the headline compound, but a compelling confirmation could only be obtained by dedicated transport experiments. The latter, however, are biased by an intrinsic n-doping of the material's surface due to its polarity. Electronic reconstruction of the polar surface shifts the topological gap below the Fermi energy, which would also prevent any future device application. Here, we report the results of DF slab calculations for chemically gated and counter-doped surfaces of Bi14Rh3I9. We demonstrate that both methods can be used to compensate the surface polarity without closing the electronic gap.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据