期刊
NANO LETTERS
卷 17, 期 8, 页码 4886-4893出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b01732
关键词
Core-multishell heterostructure nanowires; modulation doping; low-dimensional electron transport; structural properties
类别
资金
- DFG excellence program Nanosystems Initiative Munich (NIM)
- collaborative research center [SFB 631]
- Technische Universitat Munchen, Institute for Advanced Study
- TUM University Foundation Fellowship
- TUM International Graduate School of Science and Engineering (IGSSE)
- IBM Ph.D. Fellowship Program
- AFOSR [FA9550-15-1-0247]
- National Science Foundation [NSF 1611341, 1308654]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1611341, 1308654] Funding Source: National Science Foundation
Modulation-doped III-V semiconductor nano wire (NW) heterostructures have recently emerged as promising candidates to host high-mobility electron channels for future high-frequency, low-energy transistor technologies. The one-dimensional geometry of NWs also makes them attractive for studying quantum confinement effects. Here, we report correlated investigations into the discrete electronic sub-band structure of confined electrons in the channel of Si 5 doped GaAs GaAs/AlAs core superlattice NW heterostructures and the associated signatures in low-temperature transport. On the basis of accurate structural and dopant analysis using scanning transmission electron microscopy and atom probe tomography, we calculated the sub-band structure of electrons confined in the NW core and employ a labeling system inspired by atomic orbital notation. Electron transport measurements on top-gated NW transistors at cryogenic temperatures revealed signatures consistent with the depopulation of the quasi-one-dimensional sub-bands, as well as confinement in zero-dimensional-like states due to an impurity-defined background disorder potential. These findings are instructive toward reaching the ballistic transport regime in GaAs-AlGaAs based NW systems.
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