期刊
NANO LETTERS
卷 17, 期 4, 页码 2660-2666出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b00473
关键词
vdW heterostructures; field-effect; transport; graphene; density functional theory; nonequilibrium Green's function
类别
资金
- Danish Research Foundation [DNRF103]
- HCO DTU-COFUND program
- VILLUM FONDEN [9455]
- Villum Fonden [00009455, 00013340] Funding Source: researchfish
Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS2 devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation establishes an important design rule for ultrathin devices based on 2D atomic crystals.
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