期刊
NANO LETTERS
卷 17, 期 12, 页码 7593-7598出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b03579
关键词
Transition metal dichalcogenides (TMDs); MoS2; BN; Fabry-Perot cavity; absorption; photodiode
类别
资金
- NUS research scholarship (WQX)
- A-STAR 2D Pharos grant [SERC 1527000012]
- National Natural Science Foundation of China [51472164]
- 1000 Talents Program for Young Scientists of China
- Shenzhen Peacock Plan [KQTD2016053112042971]
- Educational Commission of Guangdong Province [2015KGJHZ006, 2016KCXTD006]
- Science and Technology Planning Project of Guangdong Province [2016B050501005]
- Natural Science Foundation of SZU [000050]
Monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) show interesting optical and electrical properties because of their direct bandgap. However, the low absorption of atomically thin TMDs limits their applications. Here, we report enhanced absorption and optoelectronic properties of monolayer molybdenum disulfide (MoS2) by using an asymmetric Fabry-Perot cavity. The cavity is based on a hybrid structure of MoS2/hexagonal boron nitride (BN)/Au/SiO2 realized through layer-by-layer vertical stacking. Photoluminescence (PL) intensity of monolayer MoS2 is enhanced over 2 orders of magnitude. Theoretical calculations show that the strong absorption of MoS2 comes from photonic localization on the top of the microcavity at optimal BN spacer thickness. The n/n(+) MoS2 homojunction photodiode incorporating this asymmetric Fabry-Perot cavity exhibits excellent current rectifying behavior with an ideality factor of 1 and an ultrasensitive and gate-tunable external photo gain and specific detectivity. Our work offers an effective method to achieve uniform enhanced light absorption by monolayer TMDs, which has promising applications for highly sensitive optoelectronic devices.
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