期刊
MRS BULLETIN
卷 42, 期 2, 页码 131-137出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2016.326
关键词
elastic properties; electronic material; dielectric
资金
- Air Force Offi ce of Scientific Research [FA9550-12-1-0074]
- National Science Foundation [1638163]
- Ministry of Science and Technology of China [0102014DFA52030]
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1638163] Funding Source: National Science Foundation
A thin-film field-effect transistor (TFT) is a three-terminal device comprising source, drain, and gate electrodes, a dielectric layer, a semiconductor layer, and a substrate. The TFT is a fundamental building component in a variety of electronic devices. Developing an intrinsically stretchable TFT entails availability and usage of a functional material with elastomeric deformability in response to an externally applied stress. This represents a major materials challenge. In this article, we survey strategies to synthesize these elastomeric functional materials, and how these materials are assembled to fabricate intrinsically stretchable TFT devices. Developing solution-based printing technology to assemble intrinsically stretchable TFTs is considered a prospective strategy for wearable electronics for industrial adaptation in the near future.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据