期刊
2018 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY (ICIT)
卷 -, 期 -, 页码 841-846出版社
IEEE
DOI: 10.1109/ICIT.2018.8352287
关键词
SiC; Schottky diode; electrical characteristics; power converter
Ampere laboratory develops a technology of lateral power integrated circuit in Silicon Carbide (SiC). The purpose is to establish integrated power converter with its driver, which can operate in harsh environment. The technology is namely consisted by lateral MESFETs and lateral diodes. This paper presents two types of manufactured diodes: rectifier Schottky diode and power Schottky diode.
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