期刊
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
卷 14, 期 2, 页码 255-260出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jno.2019.2487
关键词
Semiconductors; Nanocrystalline Materials; Optical Materials and Properties; Dielectrics; Radiation Detector
资金
- King Abdulaziz City for Science and Technology (KACST) [LGP-37-109]
One pot room temperature synthesis of pure and Zn doped PbI2 single crystalline nanosheets (SCNs) have been achieved through chemical route. SEM mapping study confirm homogeneous doping of Zn in PbI2. Hexagonal shape of SCNs of average dimension similar to 41 nm was confirmed through TEM analysis predominantly with slight modification in morphology due to Zn doping. Vibrational modes are found to be red shifted compared to bulk. Absorption spectra contains two absorbance bands at similar to 284 and 330 nm in pure at 280 and 326 nm in doped PbI2. Owing to this band gap is increased from 2.91 to 3.04 eV. Dielectric constant and ac electrical conductivity are enhanced for doped SCNs. Radiation absorption ability is enhanced by similar to 2 times in doped compared to pure. The enrichment in key characteristics of PbI2 due to Zn doping indicates its better applications.
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