期刊
INTERNATIONAL JOURNAL OF NANOSCIENCE
卷 18, 期 2, 页码 -出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0219581X18500217
关键词
Indium nitride nanoparticles; laser ablation in liquid; III-nitrides semiconductor
资金
- Department of Applied Science, University of Technology, Baghdad, Iraq
Indium nitride InN nanoparticles NPs suspension prepared by Nd:YAG laser ablation of indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, UV/VIS/NIR spectrophotometer and Conductivity meter were used to determine the properties of the nanoparticles prepared with different laser conditions. Fourier transform infrared spectra exhibit the presence of In=N and In-N bonds, which indicates the formation of InN particles. X-ray diffraction pattern observed in the formation of InN NPs with cubic phase, the average diameters of the dominant peak c-InN (101) were approximately 2 nm. Scanning electron microscopy image shows the presence of a large number of spherical shape nanoparticles having a particle size in the range 2-40 nm with a few individual nanoparticles larger than 128nm. The transmission spectra of InN NPs suspension have the maximum optical transmission edge at 1378 nm with bandgap energy was 0.85-1.2 eV. InN has high electrical conductivity that depends on temperature value with small activation energy at room temperature ranging from 0.0318 meV to 0.1591 meV.
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