期刊
MICROSCOPY AND MICROANALYSIS
卷 23, 期 2, 页码 210-220出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S1431927617000198
关键词
Field-ion microscopy; tomography; point defects
资金
- EMC3 labex DYNAMITE
- international field emission society (IFES)
- Materials Science Center at Cornell University [National Science Foundation (NSF)
- US Department of Energy
- NSF
This article reviews recent advances utilizing field-ion microscopy (FIM) to extract atomic-scale three-dimensional images of materials. This capability is not new, as the first atomic-scale reconstructions of features utilizing FIM were demonstrated decades ago. The rise of atom probe tomography, and the application of this latter technique in place of FIM has unfortunately severely limited further FIM development. Currently, the ubiquitous availability of extensive computing power makes it possible to treat and reconstruct FIM data digitally and this development allows the image sequences obtained utilizing FIM to be extremely valuable for many material science and engineering applications. This article demonstrates different applications of these capabilities, focusing on its use in physical metallurgy and semiconductor science and technology.
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