期刊
MICROELECTRONICS RELIABILITY
卷 76, 期 -, 页码 561-565出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2017.07.072
关键词
InGaN degradation; InGaN LED; InGaN LED degradation; InGaN LED-on-silicon; Reliability; LED reliability; GaN reliability; MOCVD; Defects; DLTS; Electroluminescence; Cathodoluminescence; Nitrogen vacancies
资金
- National Research Foundation
We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV below the conduction band edge (Ec - 0.26 eV) and that correlated with the active area's lower nitrogen content as compared to unstressed samples. The combination of Current-Voltage, Electroluminescence, Cathodoluminescence, and device simulations indicate that an increase in the density of these defects is correlated with an increase in the non-radiative carrier recombination that causes degradation in light emission. Preventing formation of these defects will be critical for improving InGaN-on-silicon LED reliability. (C) 2017 Elsevier Ltd. All rights reserved.
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